Raman spectrum study of δ-doped GaAs/AlAs multiple-quantum wells
Zheng Wei-Min1, †, Cong Wei-Yan1, Li Su-Mei2, Wang Ai-Fang1, Li Bin3, ‡, Huang Hai-Bei4
       

(color online) Raman spectra recorded from sample C in the backscattering configuration at different temperatures from 4 K to 50 K. The samples were excited using the 514.5 nm line of an Ar-ion laser with the power of 20 mW.