Magnetism and piezoelectricity of hexagonal boron nitride with triangular vacancy

Zhao Lu-Si^{1, 2}, Chen Chun-Ping^{1, 2}, Liu Lin-Lin^{1, 2}, Yu Hong-Xia^{1, 2}, Chen Yi^{1, 2}, Wang Xiao-Chun^{1, 2, †}

(color online) Optimized structures of (a) boron vacancy V_B-BN and (b) nitrogen vacancy V_N-BN. Gray and green spheres represent nitrogen and boron atoms, respectively. Rhombus marked by black dashed lines denotes primitive cell.