Positive gate bias stress-induced hump-effect in elevated-metal metal–oxide thin film transistors<xref rid="cpb_26_12_128101fn1" ref-type="fn">*</xref> <fn id="cpb_26_12_128101fn1"> <label>*</label> <p>Project supported by the Science and Technology Program of Suzhou City, China (Grant No. SYG201538) and the National Natural Science Foundation of China (Grant No. 61574096).</p> </fn>

Positive gate bias stress-induced hump-effect in elevated-metal metal–oxide thin film transistors* *

Project supported by the Science and Technology Program of Suzhou City, China (Grant No. SYG201538) and the National Natural Science Foundation of China (Grant No. 61574096).

Qi Dong-Yu, Zhang Dong-Li, Wang Ming-Xiang^†

(color online) Time evolutions of transfer characteristics, measured at V_d of 1 V, of an EMMO TFT with W/L = 50/12 μm subjected to PBS with V_g stress of 20 V at 50 °C. The transfer curves are plotted in both linear and logarithmic scales.