Near-interface oxide traps in 4H–SiC MOS structures fabricated with and without annealing in NO
(color online) Typical leakage-electric field curves of the N2 POA sample and NO POA sample with different stress times.
Near-interface oxide traps in 4H–SiC MOS structures fabricated with and without annealing in NO |
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(color online) Typical leakage-electric field curves of the N2 POA sample and NO POA sample with different stress times. |
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