Near-interface oxide traps in 4H–SiC MOS structures fabricated with and without annealing in NO
Sun Qiu-Jie1, Zhang Yu-Ming1, Song Qing-Wen1, †, Tang Xiao-Yan1, ‡, Zhang Yi-Meng1, Li Cheng-Zhan2, Zhao Yan-Li2, Zhang Yi-Men1
       

(a) Schematic cross section of the SiC MOS capacitor, (b) low-resolution TEM, (c) the AFM image of the as-grown SiO2, and (d) HRTEM on the cross section of the SiO2/4H–SiC interface.