Near-interface oxide traps in 4H–SiC MOS structures fabricated with and without annealing in NO |
(a) Schematic cross section of the SiC MOS capacitor, (b) low-resolution TEM, (c) the AFM image of the as-grown SiO2, and (d) HRTEM on the cross section of the SiO2/4H–SiC interface. |