Effects of rapid thermal annealing on crystallinity and Sn surface segregation of

films on Si (100) and Si (111)

Miao Yuan-Hao^†,, Hu Hui-Yong^‡,, Song Jian-Jun, Xuan Rong-Xi, Zhang He-Ming

(color online) Plots of (a) RMS and (b) SAD versus annealing temperature for samples A and B, respectively, which are extracted from AFM images. SAD is the surface area difference of Ge_1−xSn_x films.