Effects of rapid thermal annealing on crystallinity and Sn surface segregation of films on Si (100) and Si (111)
Miao Yuan-Hao†, , Hu Hui-Yong‡, , Song Jian-Jun, Xuan Rong-Xi, Zhang He-Ming
       

(color online) Raman spectra of sample A and B annealed at the temperatures ranging from 300 °C–700 °C.