Effects of rapid thermal annealing on crystallinity and Sn surface segregation of
(color online) XRD patterns of the crystalline Ge1−xSnx/Si (111) film after RTA at 300 °C, 400 °C, 500 °C, 600 °C, and 700 °C for 30 s.
Effects of rapid thermal annealing on crystallinity and Sn surface segregation of
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(color online) XRD patterns of the crystalline Ge1−xSnx/Si (111) film after RTA at 300 °C, 400 °C, 500 °C, 600 °C, and 700 °C for 30 s. |
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