Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal–oxide–semiconductor field-effect transistors
Xu Yan-Bing, Yang Hong-Guan
       

(color online) Transfer currents vs. drain voltages for changing substrate bias from −1 V to −0.6 V, in which the inset shows the current contour between the drain voltage and the substrate voltage at the reference current .