Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal–oxide–semiconductor field-effect transistors
Xu Yan-Bing, Yang Hong-Guan
       

(color online) Transfer currents vs. drain voltages for changing gate pulse frequencies from 0.1 MHz to 5 MHz, in which the inset (in color) shows the corresponding slope of versus f at the WPB .