Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal–oxide–semiconductor field-effect transistors
Xu Yan-Bing, Yang Hong-Guan †
       

(color online) Transfer currents versus drain voltages for changing (a) , (b) (b), and (c) , in which the inset figures show the corresponding slope of versus (a) , (b) and (c) at the WPB respectively.