Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
(color online) Forward I–V characteristics of the gate Schottky contacts for the AlGaN/GaN HFETs after FG 600 °C RTA.
Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors |
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(color online) Forward I–V characteristics of the gate Schottky contacts for the AlGaN/GaN HFETs after FG 600 °C RTA. |
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