Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
(color online) Variations of measured I–V output characteristics for the four samples after FG RTA processing.
Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors |
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(color online) Variations of measured I–V output characteristics for the four samples after FG RTA processing. |
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