Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing
Cross-sectional SEM image of the Si1−xGex film annealed at 900 °C.
Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing |
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Cross-sectional SEM image of the Si1−xGex film annealed at 900 °C. |
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