Segregations and desorptions of Ge atoms in nanocomposite Si
1−
x
Ge
x
films during high-temperature annealing
Wang Yu
1
, Yang Meng
1
, Wang Gang
1
, Wei Xiao-Xu
1
, Wang Jun-Zhuan
1
, Li Yun
1
, Zou Ze-Wen
2
, Zheng You-Dou
1
, Shi Yi
1, †
EDS and XPS measured Ge atomic compositions as a function of
.