Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing
Wang Yu1, Yang Meng1, Wang Gang1, Wei Xiao-Xu1, Wang Jun-Zhuan1, Li Yun1, Zou Ze-Wen2, Zheng You-Dou1, Shi Yi1, †
       

((a) and (b)) SEM images of the surface of the Si0.6Ge0.4 film before and after being annealed. ((c) and (d)) Cross-sectional SEM images before and after annealing the Si0.6Ge0.4 film.