Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Segregations and desorptions of Ge atoms in nanocomposite Si_1−xGe_x films during high-temperature annealing

Wang Yu¹, Yang Meng¹, Wang Gang¹, Wei Xiao-Xu¹, Wang Jun-Zhuan¹, Li Yun¹, Zou Ze-Wen², Zheng You-Dou¹, Shi Yi^{1, †}

((a) and (b)) SEM images of the surface of the Si_0.6Ge_0.4 film before and after being annealed. ((c) and (d)) Cross-sectional SEM images before and after annealing the Si_0.6Ge_0.4 film.