Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Segregations and desorptions of Ge atoms in nanocomposite Si_1−xGe_x films during high-temperature annealing

Wang Yu¹, Yang Meng¹, Wang Gang¹, Wei Xiao-Xu¹, Wang Jun-Zhuan¹, Li Yun¹, Zou Ze-Wen², Zheng You-Dou¹, Shi Yi^{1, †}

(a) SEM image and (b) EDS mapping of the Si_0.3Ge_0.7 film annealed at 1000 °C.