Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Segregations and desorptions of Ge atoms in nanocomposite Si_1−xGe_x films during high-temperature annealing

Wang Yu¹, Yang Meng¹, Wang Gang¹, Wei Xiao-Xu¹, Wang Jun-Zhuan¹, Li Yun¹, Zou Ze-Wen², Zheng You-Dou¹, Shi Yi^{1, †}

(color online) (a) Raman spectrum of the Si_0.3Ge_0.7 film annealed at 1000 °C. The inset shows the zoomed spectrum of the Si–Si mode. (b) Multiple peak fitting of the Ge–Si mode.