Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing
TEM image and the diffraction pattern (inset) of Ge-rich SiGe film after thermal annealing at 900 °C for 300 s.
Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing |
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TEM image and the diffraction pattern (inset) of Ge-rich SiGe film after thermal annealing at 900 °C for 300 s. |
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