Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).</p> </fn>

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide* *

Project supported by the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

Liang Feng^{1, 2}, Zhao De-Gang^{1, 3, †}, Jiang De-Sheng¹, Liu Zong-Shun¹, Zhu Jian-Jun¹, Chen Ping¹, Yang Jing¹, Liu Wei¹, Liu Shuang-Tao¹, Xing Yao¹, Zhang Li-Qun⁴, Wang Wen-Jie⁵, Li Mo⁵, Zhang Yuan-Tao, Du Guo-Tong

(color online) Output light powers under an injecting current of 120mA for InGaN-based violet LDs with different thickness values of u-Al_0.05Ga_0.95N layer. The inset shows the total optical loss (black) and the barrier of the electron blocking layer (red).