Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide Project supported by the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037). |
(color online) Optical field distributions of InGaN-based violet LDs (a) with different aluminum content values of u-AlxGa1−xN (0 ≤ x ≤ 0.1) and (b) with different thickness values of u-Al0.05Ga0.95N. In Fig. |