Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).</p> </fn>

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide* *

Project supported by the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

Liang Feng^{1, 2}, Zhao De-Gang^{1, 3, †}, Jiang De-Sheng¹, Liu Zong-Shun¹, Zhu Jian-Jun¹, Chen Ping¹, Yang Jing¹, Liu Wei¹, Liu Shuang-Tao¹, Xing Yao¹, Zhang Li-Qun⁴, Wang Wen-Jie⁵, Li Mo⁵, Zhang Yuan-Tao, Du Guo-Tong

(color online) Optical field distribution (a) and the barrier of the electron blocking layer (b) of InGaN-based violet LDs with different u-In_0.02Ga_0.98N/GaN UWGs. The inset in panel (a) shows the optical confinement factor (OCF) and the total optical loss (TOL), which are marked as black and red color, respectively. The inset in panel (b) indicates the conduction band diagram of LD1 and the definition of barriers.