An improved memristor model for brain-inspired computing
Zhou Errui, Fang Liang, Liu Rulin, Tang Zhenseng
       

(color online) Curves of (a) iv, (b) vt and it, (c) rv, (d) rt and xt of the improved model. Parameters are μv = 1 × 10−14 m/V2, D = 10 nm, Ron = 100 Ω, Roff = 16 k Ω, vt = 0.01 V, ε0 = x0 = 0.5, ω = 2, σ = 0.1, α = 0.01, j = p = 1.