Biaxial strain-induced enhancement in the thermoelectric performance of monolayer WSe2
Shen Wanhuizi1, Zou Daifeng1, 2, †, Nie Guozheng1, Xu Ying1
       

(color online) Thermoelectric transport properties of n-doped monolayer WSe2 as a function of electrons per unit cell at typical values of strain. (a) Seebeck coefficient. (b) The relaxation time scaled electrical conductivity. (c) Relaxation time scaled thermoelectric power factor. The insets are the thermoelectric transport properties of carrier n-doped monolayer WSe2 at each given value of strain at 900 K with the electron concentration n = −5 × 1019 cm−3. The range in which the thermoelectric transport properties are superior to the unstrained case is denoted with yellow.