The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn<sub>3</sub>N<sub>2</sub> precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

Li Bing-Sheng¹, Xiao Zhi-Yan^{2, †}, Ma Jian-Gang², Liu Yi-Chun^{2, ‡}

(color online) Variations of the carrier concentration with annealing temperature for different conduction types of ZnO thin films. The ZnO samples are prepared by oxidizing the Zn₃N₂:Al thin films. The squares represent n-type ZnO and the circles denote p-type ZnO.