The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn<sub>3</sub>N<sub>2</sub> precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

Li Bing-Sheng¹, Xiao Zhi-Yan^{2, †}, Ma Jian-Gang², Liu Yi-Chun^{2, ‡}

(color online) Photoluminescence spectra (PL) of ZnO. Left side shows the room temperature PL spectra of the p-type ZnO annealed at 700 °C and undoped ZnO. The inset displays integrated PL intensity dependent on the temperature for the intrinsic ZnO. The squares denote experimental data points. The dotted line represents theoretical fitting by using the equation I_(T) = I₀/[1 + A exp(−ΔE/k_BT)]. Right side shows the low temperature (80 K) PL spectra of ZnO annealed at (a) 700 °C, and (b) 1000 °C, and (c) undoped ZnO.