The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn<sub>3</sub>N<sub>2</sub> precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

Li Bing-Sheng¹, Xiao Zhi-Yan^{2, †}, Ma Jian-Gang², Liu Yi-Chun^{2, ‡}

(color online) Dependence of electronic properties of p-ZnO, obtained from oxidation of Zn₃N₂ precursor, on the time at room temperature. The hole concentration and the mobility keep almost constant with time.^[136]