The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn<sub>3</sub>N<sub>2</sub> precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

Li Bing-Sheng¹, Xiao Zhi-Yan^{2, †}, Ma Jian-Gang², Liu Yi-Chun^{2, ‡}

(color online) XRD curves for the as-grown and annealed samples at different temperatures in oxygen ambient. The annealing temperatures and the linewidths are given and indicated next to their corresponding scan curve. The inset (color online) shows the magnified view of the area around the diffraction peak from the as-grown sample. The peak (located at 34.19°) appears between the ZnO(002) (34.42°) and Zn₃N₂(222) (31.70°) peaks, indicating the formation of Zn–N–O ternary alloy.^[137]