The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn<sub>3</sub>N<sub>2</sub> precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

Li Bing-Sheng¹, Xiao Zhi-Yan^{2, †}, Ma Jian-Gang², Liu Yi-Chun^{2, ‡}

(color online) Schematic diagram of the p-type ZnO:N fabricated by oxidizing the Zn₃N₂ precursor and the conventional chemical doping methods. Left side: Zn₃N₂ change into p-ZnO:N with oxidizing procedure, in which the N atoms are replaced by O atoms. Right side: the conventional way to fabricate p-ZnO:N with N occupying O lattice sites.