The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn<sub>3</sub>N<sub>2</sub> precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

Li Bing-Sheng¹, Xiao Zhi-Yan^{2, †}, Ma Jian-Gang², Liu Yi-Chun^{2, ‡}

(color online) Optical band gaps of N–O based compounds calculated from transmittance spectra with characteristic function, (αhν)² ∝ hν − E_g. Left: ZnNO ternary alloys with band gap tuning from 1.35 to 3.3 eV (ΔE = 1.95 eV); right: GaON alloy with band gap tuning from 2.05 eV to 4.8 eV (ΔE = 2.75 eV).