Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate
Zhang Lu, Hong Hai-Yang, Wang Yi-Sen, Li Cheng †, Lin Guang-Yang, Chen Song-Yan, Huang Wei, Wang Jian-Yuan
       

(color online) (a) AES scan, (b) TEM image, (c) and SAED patterns of the sample poly-Ge0.85Sn0.15.