Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate
Zhang Lu, Hong Hai-Yang, Wang Yi-Sen, Li Cheng †, Lin Guang-Yang, Chen Song-Yan, Huang Wei, Wang Jian-Yuan
       

(color online) XRD patterns of poly-Ge and poly-GeSn films fabricated from (a) a-Ge0.85Sn0.15 and (b) a-Ge0.8Sn0.2 after PLA with energy density of 250 mJ/cm2, 400 mJ/cm2, and 550 mJ/cm2.