Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing
Xue Junjun1, 3, Cai Qing2, Zhang Baohua2, Ge Mei2, Chen Dunjun2, †, Zhi Ting1, Chen Jiangwei1, Wang Lianhui3, Zhang Rong2, Zheng Youdou2
       

(color online) AFM images of InGaN layers capped with GaN: (a) as-grown, (b) in-situ annealed (S1), (c) ex-situ annealed (S2).