Slip on the surface of silicon wafers under laser irradiation: Scale effect

Jia Zhi-Chao^{1, 2}, Li Ze-Wen^{1, 2}, Zhou Jie^{1, 2}, Ni Xiao-Wu^{1, 2, †}

(color online) (a)–(c) OM images of sample 1 with different irradiation time and (d)–(f) typical images for samples 1–3. Dopant concentrations increase from sample 1 to sample 3. The sizes are 80 μm × 60 μm.