Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes
Liang Feng1, 2, Zhao De-Gang1, 3, †, Jiang De-Sheng1, Liu Zong-Shun1, Zhu Jian-Jun1, Chen Ping1, Yang Jing1, Liu Wei1, Li Xiang1, Liu Shuang-Tao1, Xing Yao1, Zhang Li-Qun4, Li Mo5, Zhang Jian5
       

(color online) Schematic structure of GaN-based blue and green LDs with u-InGaN UWG. [Si]: doping level of Si. [Mg]: doping level of Mg. CL: cladding layer. LWG: lower waveguide. UWG: upper waveguide. EBL: electron blocking layer.