Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
Zeng Yan1, Li Xiao-Jin1, †, Qing Jian1, Sun Ya-Bin1, ‡, Shi Yan-Ling1, Guo Ao2, Hu Shao-Jian2
       

(a)–(c) Relative contributions of the remaining , , and to the overall degradation, (d)–(f) relative contribution of the remaining , , , and to their initial degradation , respectively, for different NBTI stress times at C, , and .