Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
Zeng Yan1, Li Xiao-Jin1, †, Qing Jian1, Sun Ya-Bin1, ‡, Shi Yan-Ling1, Guo Ao2, Hu Shao-Jian2
       

(color online) Time evolution of measured (symbols) under different conditions for NBTI recovery. Overall model prediction for and underlying , , and subcomponents are also shown.