Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
Zeng Yan
1
, Li Xiao-Jin
1, †
, Qing Jian
1
, Sun Ya-Bin
1, ‡
, Shi Yan-Ling
1
, Guo Ao
2
, Hu Shao-Jian
2
Measured
and model prediction at
s for varying
.
