Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
Zeng Yan1, Li Xiao-Jin1, †, Qing Jian1, Sun Ya-Bin1, ‡, Shi Yan-Ling1, Guo Ao2, Hu Shao-Jian2
       

(color online) (a)–(c) Relative contributions from , , and versus V under different T at , (d)–(f) dependence of the relative contributions from each subcomponents for different at given T = 85 °C.