Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
Zeng Yan1, Li Xiao-Jin1, †, Qing Jian1, Sun Ya-Bin1, ‡, Shi Yan-Ling1, Guo Ao2, Hu Shao-Jian2
Time evolution of and the model calculation under different stress conditions, the extracted parameters: ), (1/cm), C = 0 ( is negligible at low voltage), Γ =0.54 (cm/MV), (eV).
