Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
Zeng Yan1, Li Xiao-Jin1, †, Qing Jian1, Sun Ya-Bin1, ‡, Shi Yan-Ling1, Guo Ao2, Hu Shao-Jian2
       

The experimental , and analytical model prediction under different conditions, the parameters of the analytical model are given as , and , , , , .