Angle-resolved x-ray photoelectron spectroscopy study of GeO<sub><i>x</i></sub> growth by plasma post-oxidation

Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation

Zhao Zhiqian¹, Zhang Jing^{1, †}, Wang Xiaolei^{2, 3, ‡}, Wei Shuhua¹, Zhao Chao^{2, 3}, Wang Wenwu^{2, 3}

(color online) Areal intensity ratios of various states of Ge components as a function of the takeoff angle for a GeO_x thickness of 0.59 nm. According to these results, the depth distributions of the Ge oxidation states are obtained.