Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier<xref rid="cpb_26_10_107301_fn1" ref-type="fn">*</xref> <fn id="cpb_26_10_107301_fn1"> <label>*</label> <p>Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. F2013202256).</p> </fn>

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier* *

Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. F2013202256).

Han Tie-Cheng, Zhao Hong-Dong^†, Yang Lei, Wang Yang

(color online) Threshold voltages as a function of the gate length of InAlN/GaN HEMTs with and without back-barrier at V_DS = 7 V, respectively.