The residual C concentration control for low temperature growth p-type GaN<xref rid="cpb_26_10_107102_fn1" ref-type="fn">*</xref> <fn id="cpb_26_10_107102_fn1"> <label>*</label> <p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0401801 and 2016YFB0400803), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project (Grant No. JCKY2016212A503), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).</p> </fn>

The residual C concentration control for low temperature growth p-type GaN* *

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0401801 and 2016YFB0400803), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project (Grant No. JCKY2016212A503), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).

Liu Shuang-Tao¹, Zhao De-Gang^{1, 2, †}, Yang Jing^{1, ‡}, Jiang De-Sheng¹, Liang Feng¹, Chen Ping¹, Zhu Jian-Jun¹, Liu Zong-Shun¹, Li Xiang¹, Liu Wei¹, Xing Yao¹, Zhang Li-Qun³

(color online) The C concentration in samples after different annealing treatments. In Fig. 7(a) the curve w displays the C concentration without any annealing treatment, while the curves 550, 680, and 750 represent the C concentrations annealed outside the MOCVD system with the annealing temperature 550, 680, and 750 °C, respectively, and the curve in means the C concentration annealing in MOCVD. In Fig. 7(b) the curves in and in + out represent the C concentration annealed in MOCVD and annealing in MOCVD with another extra outside annealing process, respectively.