The residual C concentration control for low temperature growth p-type GaN<xref rid="cpb_26_10_107102_fn1" ref-type="fn">*</xref> <fn id="cpb_26_10_107102_fn1"> <label>*</label> <p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0401801 and 2016YFB0400803), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project (Grant No. JCKY2016212A503), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).</p> </fn>

The residual C concentration control for low temperature growth p-type GaN* *

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0401801 and 2016YFB0400803), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project (Grant No. JCKY2016212A503), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).

Liu Shuang-Tao¹, Zhao De-Gang^{1, 2, †}, Yang Jing^{1, ‡}, Jiang De-Sheng¹, Liang Feng¹, Chen Ping¹, Zhu Jian-Jun¹, Liu Zong-Shun¹, Li Xiang¹, Liu Wei¹, Xing Yao¹, Zhang Li-Qun³

(color online) The H concentration measured by SIMS in the samples after different annealing ways. The curve w represents the H concentration without any annealing treatment, while the curves in, in + out and out respectively represent: the H concentration in sample A1* annealed in situ in the MOCVD reactor, sample A1* with additional annealing process outside of MOCVD reactor, and in sample A1 annealed outside of the MOCVD reactor.