Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO<xref rid="cpb_26_10_107101_fn1" ref-type="fn">*</xref> <fn id="cpb_26_10_107101_fn1"> <label>*</label> <p>Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113 and 61574140), the Beijing NOVA Program, China (Grant No. Z1611000049161132016071), China Academy of Engineering Physics (CAEP) Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201502), the Beijing Municipal Science and Technology Commission Project, China (Grant Nos. Z161100002116018 and D16110300430000), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2012098)</p> </fn>

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO* *

Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113 and 61574140), the Beijing NOVA Program, China (Grant No. Z1611000049161132016071), China Academy of Engineering Physics (CAEP) Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201502), the Beijing Municipal Science and Technology Commission Project, China (Grant Nos. Z161100002116018 and D16110300430000), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2012098)

Shen Zhan-Wei¹, Zhang Feng^{1, 3, †}, Dimitrijev Sima², Han Ji-Sheng², Yan Guo-Guo¹, Wen Zheng-Xin¹, Zhao Wan-Shun¹, Wang Lei¹, Liu Xing-Fang¹, Sun Guo-Sheng^{1, 3}, Zeng Yi-Ping^{1, 3}

(color online) (a) Comparison among the curves of surface potential versus gate voltage curves of 4H–SiC MOS capacitors on (), (), and (0001) faces, and (b) distributions of D_it extracted from high-frequency QSCV method for those MOS capacitors, with D_{it,11 − 20}, D_{it,1 − 100}, and D_it,0001 corresponding to the MOS capacitors on (), (), and (0001) faces, respectively.