Tunable resonant radiation force exerted on semiconductor quantum well nanostructures: Nonlocal effects<xref rid="cpb_26_10_106802_fn1" ref-type="fn">*</xref> <fn id="cpb_26_10_106802_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant No. 11474106), the Natural Science Foundation of Guangdong Province, China (Grant No. 2016A030313439), and the Science and Technology Program of Guangzhou City, China (Grant No. 201707010403)</p> </fn>

Tunable resonant radiation force exerted on semiconductor quantum well nanostructures: Nonlocal effects* *

Project supported by the National Natural Science Foundation of China (Grant No. 11474106), the Natural Science Foundation of Guangdong Province, China (Grant No. 2016A030313439), and the Science and Technology Program of Guangzhou City, China (Grant No. 201707010403)

Wang Guang-Hui^{1, 2, †}, Yan Xiong-Shuo^{1, 2}, Zhang Jin-Ke^{1, 2}

(color online) Maximum resonant radiation force (F_x and F_z) versus the incident angle θ in the two cases of p-polarization [panels (a) and (b)], and s-polarization [panels (c) and (d)] for three different QWNS widths, respectively.