Tunable resonant radiation force exerted on semiconductor quantum well nanostructures: Nonlocal effects<xref rid="cpb_26_10_106802_fn1" ref-type="fn">*</xref> <fn id="cpb_26_10_106802_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant No. 11474106), the Natural Science Foundation of Guangdong Province, China (Grant No. 2016A030313439), and the Science and Technology Program of Guangzhou City, China (Grant No. 201707010403)</p> </fn>

Tunable resonant radiation force exerted on semiconductor quantum well nanostructures: Nonlocal effects* *

Project supported by the National Natural Science Foundation of China (Grant No. 11474106), the Natural Science Foundation of Guangdong Province, China (Grant No. 2016A030313439), and the Science and Technology Program of Guangzhou City, China (Grant No. 201707010403)

Wang Guang-Hui^{1, 2, †}, Yan Xiong-Shuo^{1, 2}, Zhang Jin-Ke^{1, 2}

(color online) The schematic diagrams of a QWNS, radiation forces, and incident and polarization direction of a monochromatic plane wave. F_x and F_z denote the x and z components of the radiation force exerted on the QWNS by incident light, respectively. The signs ↑ and ⊙ denote polarization direction of p- and s-polarized light waves, respectively.