Damage threshold influenced by polishing imperfection distribution under 355-nm laser irradiation

Yu Zhen^{1, 2}, Qi Hong-Ji^{1, †}, Zhang Wei-Li¹, Wang Hu^{1, 2}, Wang Bin^{1, 2}, Wang Yue-Liang^{1, 2}, Huang Hao-Peng^{1, 2}

Depth dependence of product of inclusion ions sputtering in the pit area of 100 μm × 100 μm from the TOF-SIMS. The three fitting curves in black represent the negative exponential distribution of the corresponding elements.