Damage threshold influenced by polishing imperfection distribution under 355-nm laser irradiation
Calculated threshold curves of critical fluence as a function of fluence (8 ns, 355 nm) in the case of CeO2 particles buried in fused silica substrate.
Damage threshold influenced by polishing imperfection distribution under 355-nm laser irradiation |
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Calculated threshold curves of critical fluence as a function of fluence (8 ns, 355 nm) in the case of CeO2 particles buried in fused silica substrate. |
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